Research Description:

Thin-film materials and devices for microelectronics and macroelectronics; silicon-based heterojunctions and three-dimensional integration for VLSI; atomic scale growth of novel materials; materials processing; transistors, FET’s, quantum devices, and optoelectronic devices; rapid thermal chemical vapor deposition, silicon-germanium and silicon-germanium-carbon alloys, silicon-on-insulator, and heterojunction devices.